silicon pin photodiode, rohs compliant www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81522 390 rev. 1.5, 08-sep-08 BPW41N vishay semiconductors description BPW41N is a pin photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. filter bandwidth is matched with 900 nm to 950 nm ir emitters. features ? package type: leaded ? package form: side view ? dimensions (in mm): 5 x 4 x 6.8 ? radiant sensitive area (in mm 2 ): 7.5 ? high radiant sensitivity ? daylight blocking filter matched with 940 nm emitters ? fast response times ? angle of half sensitivity: ? = 65 ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high speed detector for infrared radiation ? infrared remote control and free air data transmission systems, e.g. in combinat ion with tsal xxxx series ir emitters note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 4 8 0 product summary component i ra (a) ? (deg) 0.5 (nm) BPW41N 45 65 870 to 1050 ordering information ordering code packaging remarks package form BPW41N bulk moq: 4000 pcs, 4000 pcs/bulk side view absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81522 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.5, 08-sep-08 391 BPW41N silicon pin photodiode, rohs compliant vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - relative reverse light current vs. ambient te mperature fig. 2 - reverse li ght current vs. irradiance basic characteristics parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 38 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 9 5 0 n m , v r = 5 v i ra 43 45 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 870 to 1050 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - re lati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel 0.01 0.1 1 0.1 1 10 100 1000 i - re v erse light c u rrent ( a) ra e e - irradiance (m w /cm2) 10 94 8 414 v r = 5 v = 950 nm
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81522 392 rev. 1.5, 08-sep-08 BPW41N vishay semiconductors silicon pin photodiode, rohs compliant fig. 3 - reverse light current vs. reverse voltage fig. 4 - diode capacitance vs. reverse voltage fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sensitivity vs. angular displacement 0.1 1 10 1 10 100 v r - re v erse v oltage ( v ) 100 94 8 415 i - re v erse light c u rrent ( a) ra 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 = 950 nm 0 20 40 60 8 0 94 8 407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 0.1 100 110 750 8 50 950 1050 0 0.2 0.4 0.6 0. 8 1.2 s ( ) - relati v e spectral sensiti v ity rel - w a v elength (nm) 115 0 94 8 40 8 1.0 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8 406 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
document number: 81522 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.5, 08-sep-08 393 BPW41N silicon pin photodiode, rohs compliant vishay semiconductors package dimensions in millimeters sensiti v e area (2. 8 ) (2.05) 0.4 0.45 6. 8 8 .9 4 - 0.05 + 0.1 - 0.05 + 0.01 0.3 0.3 5 0.2 0.2 2.3 0.2 - 0. 8 iss u e:1; 01.07.96 dra w ing- n o.: 6.544-510 8 .01-4 specifications according to di n technical dra w ings area not plane c a chip position 19. 8 < 0.5 2.5 nom. < 0.65 96 12195
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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